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revisions ltr description date (yr-mo-da) approved a add radiation hardened and class v requirements. - ro 00-04-13 r. monnin b make change to a vo radiation hardened test limit as specified under table i. - ro 00-10-05 r. monnin the original first sheet of this drawing has been replaced. rev sheet rev sheet rev status rev bbbbbbbbbbbb of sheets sheet 123456789101112 pmic n/a prepared by charles e. besore defense supply center columbus standard microcircuit drawing checked by william j. johnson columbus, ohio 43216 this drawing is available for use by all departments approved by michael a. frye microcircuit, linear, dual, low-noise, operational amplifiers, monolithic and agencies of the department of defense drawing approval date 88-10-17 silicon amsc n/a revision level b size a cage code 67268 5962-88721 sheet 1 of 12 dscc form 2233 apr 97 5962-e587-00 distribution statement a. approved for public release; distribution is unlimited.
standard microcircuit drawing size a 5962-88721 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope. this drawing documents two product assurance class levels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha) levels are reflected in the pin. 1.2 pin. the pin is as shown in the following examples. for device classes m and q: 5962 - 88721 01 p x ~~ ~ ~ ~ ~~ ~ ~ ~ ~ ~ ~ ~ ~ federal rha device case lead stock class designator type outline finish designator (see 1.2.1) (see 1.2.2) (see 1.2.4) (see 1.2.5) \ / \/ drawing number for device class v: 5962 r 88721 01 v p x ~~ ~~ ~~ ~~ ~~ ~~ ~ ~ ~ ~ ~ ~ federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator. device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s). the device type(s) identify the circuit function as follows: device type generic number circuit function 01 op-270a dual, low-noise, precision, operational amplifier 02 op-271a dual, low-noise, high speed, operational amplifier
standard microcircuit drawing size a 5962-88721 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 3 dscc form 2234 apr 97 1.2.3 device class designator. the device class designator is a single letter identifying the product assurance level as list ed below. since the device class designator has been added after the original issuance of this drawing, device classes m and q designators will not be included in the pin and will not be marked on the device. device class device requirements documentation m vendor self-certification to the requirements for mil-std-883 compliant, non-jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535 1.2.4 case outline(s). the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style p gdip1-t8 or cdip2-t8 8 dual-in-line 2 cqcc1-n20 20 square leadless chip carrier 1.2.5 lead finish. the lead finish is as specified in mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 1.3 absolute maximum ratings. 1 / supply voltage (v s ).......................................................................................... r 18 v differential input voltage 2/ ............................................................................ r 1 v differential input current 2/ ............................................................................. r 25 ma input voltage (v in ) ..........................................................................................supply voltage output short-circuit ..........................................................................................continuous storage temperature range..............................................................................-65 q c to +150 q c lead temperature (soldering, 60 seconds) ......................................................+300 q c junction temperature (t j ) ................................................................................+150 q c thermal resistance, junction-to-case ( t jc ) .....................................................see mil-std-1835 thermal resistance, junction-to-ambient ( t ja ): case p..........................................................................................................45 q c/w case 2 ..........................................................................................................35 q c/w 1.4 recommended operating conditions. supply voltage (v s ).......................................................................................... r 15 v source resistance (r s ) ....................................................................................50 : ambient operating temperature range (t a )......................................................-55 q c to +125 q c 1.5 radiation features. maximum total dose available (dose rate = 50 C 300 rads (si) / s)..................100 krads 3/ 1/ stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2/ the inputs are protected by back-to-back diodes. current limiting resistors are not used in order to achieve low noise performance. if the differential input voltage exceeds r 1.0 v, the input current should be limited to r 25 ma. 3/ these parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in mil-std-883, method 1019, condition a.
standard microcircuit drawing size a 5962-88721 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 4 dscc form 2234 apr 97 2. applicable documents 2.1 government specification, standards, and handbooks. the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those liste d in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-973 - configuration management. mil-std-1835 - interface standard electronic component case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings (smd's). mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specification, standards, and handbooks are available from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 order of precedence. in the event of a conflict between the text of this drawing and the references cited herein, the tex t of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements. the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.2 design, construction, and physical dimensions. the design, construction, and physical dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outline(s). the case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections. the terminal connections shall be as specified on figure 1. 3.2.3 radiation exposure circuit. the radiation exposure circuit shall be as specified on figure 2. 3.3 electrical performance characteristics and post irradiation parameter limits. unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table i and shall apply over t he full ambient operating temperature range.
standard microcircuit drawing size a 5962-88721 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 5 dscc form 2234 apr 97 table i. electrical performance characteristics. test symbol conditions 1/ 2 / 3 / -55 q c d t a d +125 q c unless otherwise specified group a subgroups device type limits unit min max input offset voltage v io 101 75 p v 2,3 175 m,d,p,l,r 1 01 200 1 02 200 2,3 400 input offset current i io v cm = 0 v 1 all 10 na 2,3 30 m,d,p,l,r 1 01 100 input bias current i b v cm = 0 v 1 all 20 na 2,3 60 m,d,p,l,r 1 01 1000 input noise voltage 4/ e nt f o = 1 hz to 100 hz, t a = +25 q c 701 80nv rms input noise voltage 4/ 5 / density e n f o = 1 khz, t a = 25 q c 7 02 11 nv / hz large signal voltage gain a vo v o = r 10 v, r l = 10 k : 4 01 1500 v/mv 5,6 750 m,d,p,l,r 4 100 v o = r 10 v, r l = 2 k : 4 750 5,6 400 v o = r 10 v, r l = 10 k : 4 02 400 5,6 300 v o = r 10 v, r l = 2 k : 4 300 5,6 200 see footnotes at end of table.
standard microcircuit drawing size a 5962-88721 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 6 dscc form 2234 apr 97 table i. electrical performance characteristics C continued. test symbol conditions 1/ 2 / 3 / -55 q c d t a d +125 q c unless otherwise specified group a subgroups device type limits unit min max output voltage swing 4/ v o r l = 2 k : 4,5,6 all r 12 v average input offset 4/ voltage drift tcv os t a = C55 q c, +125 q c 2,3 01 1.0 p v/ q c 02 2.0 common mode rejection 4/ cmr v cm = r 12 v 1 all 106 db 2,3 100 power supply rejection 4/ ratio psrr v s = r 4.5 v to r 18 v 1all 3.2 p v/v 2,3 5.6 supply current 6/ i sy no load 1 all 6.5 ma 2,3 7.5 m,d,p,l,r 1 01 6.5 slew rate 4/ sr a vcl = +20, r l = 10 k : , 701 r 1.7 v/ p s t a = +25 q c 02 r 5.5 1/ unless otherwise specified v s = r 15 v, r s = 50 : . 2/ devices supplied to this drawing meet all levels m, d, p, l, and r of irradiation however this device is only tested at the r level. pre and post irradiation values are identical unless otherwise specified in table i. when performing post irradiation electrical measurements for any rha level, t a = +25 q c. 3/ these parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in mil-std-883, method 1019. 4/ not tested post irradiation. 5/ guaranteed if not tested to the limit specified. 6/ i sy limit = total for both amplifiers.
standard microcircuit drawing size a 5962-88721 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 7 dscc form 2234 apr 97 device types 01 and 02 case outlines p 2 terminal number terminal symbol 1out anc 2 -in a out a 3 +in a nc 4 -v s nc 5 +in b -in a 6 -in b nc 7 out b +in a 8 +v s nc 9 --- nc 10 --- -v s 11 --- nc 12 --- +in b 13 --- nc 14 --- nc 15 --- -in b 16 --- nc 17 --- out b 18 --- nc 19 --- nc 20 --- +v s nc = no connection figure 1. terminal connections.
standard microcircuit drawing size a 5962-88721 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 8 dscc form 2234 apr 97 figure 2. radiation exposure circuit.
standard microcircuit drawing size a 5962-88721 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 9 dscc form 2234 apr 97 3.4 electrical test requirements. the electrical test requirements shall be the subgroups specified in table iia. the electr ical tests for each subgroup are defined in table i. 3.5 marking. the part shall be marked with the pin listed in 1.2 herein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for packages where marking of the entire smd pin number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device classes q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark. the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance. for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to dscc-va prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the requirements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance. a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m. for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-std-973. 3.9 verification and review for device class m. for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offshore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m. device class m devices covered by this drawing shall be in microcircuit group number 49 (see mil-prf-38535, appendix a). 4. quality assurance provisions 4.1 sampling and inspection. for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening. for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 additional criteria for device class m. a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) t a = +125 q c, minimum. b. interim and final electrical test parameters shall be as specified in table iia herein.
standard microcircuit drawing size a 5962-88721 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 10 dscc form 2234 apr 97 table iia. electrical test requirements. test requirements subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) 111 final electrical parameters (see 4.2) 1,2,3,4,5,6 1/ 1,2,3,4,5,6 1/ 1,2,3, 1/ 2 / 4,5,6 group a test requirements (see 4.4) 1,2,3,4,5,6,7 1,2,3,4,5,6,7 1,2,3,4,5,6,7 group c end-point electrical parameters (see 4.4) 1 1 1 2/ group d end-point electrical parameters (see 4.4) 111 group e end-point electrical parameters (see 4.4) --- --- 1 1/ pda applies to subgroup 1. 2/ delta limits as specified in table iib herein shall be required where specified, and the delta values shall be completed with reference to the zero hour electrical parameters (see table i). table iib. delta limits at +25 q c. parameter device type max limit delta units v io 01 r 75 r 35 p v i b r 20 r 10 na i io r 10 r 5 na 4.2.2 additional criteria for device classes q and v. a. the burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameters shall be as specified in table iia herein. c. additional screening for device class v beyond the requirements of device class q shall be as specified in mil-prf-38535, appendix b. 4.3 qualification inspection for device classes q and v. qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be performed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4).
standard microcircuit drawing size a 5962-88721 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 11 dscc form 2234 apr 97 4.4 conformance inspection. technology conformance inspection for classes q and v shall be in accordance with mil-prf-38535 including groups a, b, c, d, and e inspections and as specified herein except where option 2 of mil-prf-38535 permits alternate in-line control testing. quality conformance inspection for device class m shall be in accordance with mil-prf-38535, appendix a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mil-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4.1 group a inspection. a. tests shall be as specified in table iia herein. b. subgroups 8, 9, 10, and 11 in table i, method 5005 of mil-std-883 shall be omitted. 4.4.2 group c inspection. the group c inspection end-point electrical parameters shall be as specified in table iia herein. 4.4.2.1 additional criteria for device class m. steady-state life test conditions, method 1005 of mil-std-883: a. test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 q c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v. the steady-state life test duration, test condition and test temperat ure, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level control by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection. the group d inspection end-point electrical parameters shall be as specified in table iia herein. 4.4.4 group e inspection. group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. end-point electrical parameters shall be as specified in table iia herein. b. for device classes q and v, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in mil-prf-38535 for the rha level being tested. for device class m, the devices shall be subjected to radiation hardness assured tests as specified in mil-prf-38535, appendix a for the rha level being tested. all device classes must meet the post irradiation end-point electrical parameter limits as defined in table i at t a = +25 q c r 5 q c, after exposure, to the subgroups specified in table iia herein. c. when specified in the purchase order or contract, a copy of the rha delta limits shall be supplied. 5. packaging 5.1 packaging requirements. the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m.
standard microcircuit drawing size a 5962-88721 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 12 dscc form 2234 apr 97 6. notes 6.1 intended use. microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 replaceability. microcircuits covered by this drawing will replace the same generic device covered by a contractor-prepared specification or drawing. 6.2 configuration control of smd's. all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished in accordance with mil-std-973 using dd form 1692, engineering change proposal. 6.3 record of users. military and industrial users should inform defense supply center columbus when a system application requires configuration control and which smd's are applicable to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) should contact dscc-va, telephone (614) 692-0525. 6.4 comments. comments on this drawing should be directed to dscc-va, columbus, ohio 43216-5000, or telephone (614) 692-0674. 6.5 abbreviations, symbols, and definitions. the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331. 6.6 sources of supply. 6.6.1 sources of supply for device classes q and v. sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a certificate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m. approved sources of supply for class m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va.
standard microcircuit drawing bulletin date: 00-10-05 approved sources of supply for smd 5962-88721 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by dscc-va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1/ vendor cage number vendor similar pin 2/ 5962-8872101pa 24355 op-270az/883c 5962-88721012a 24355 op-270arc/883c 5962-8872102pa 24355 op-271az/883c 5962-88721022a 24355 op-271arc/883c 5962-8872101vpa 24355 op270az/qmlv 5962-8872101V2A 24355 op270arc/qmlv 5962r8872101vpa 24355 op270az/qmlr 5962r8872101v2a 24355 op270arc/qmlr 1/ the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2/ caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. vendor cage vendor name number and address 24355 analog devices route 1 industrial park p.o. box 9106 norwood. ma 02062 point of contact: 1500 space park drive p.o. box 58020 santa clara, ca 95050-8020 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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